Product Summary
The BTS113A is a MOSFET.
Parametrics
BTS113A absolute maximum ratings: (1)Drain-source voltage, VDS: 60 V; (2)Drain-gate voltage, RGS = 20 kΩ, VDGR: 60V; (3)Gate-source voltage, VGS: ± 10V; (4)Continuous drain current, TC = 25℃, ID: 11.5 A; (5)ISO drain current, ID-ISO: 2.2A; (6)Pulsed drain current, ID puls: 46A; (7)Short circuit current, ISC: 27A; (8)Short circuit dissipation, PSCmax: 400 W; (9)Power dissipation, Ptot: 40W; (10)Operating and storage temperature range, Tj, Tstg: – 55 to + 150℃。
Features
BTS113A features: (1)N channel; (2)Logic level; (3)Enhancement mode; (4)Temperature sensor with thyristor characteristic; (5)The drain pin is electrically shorted to the tab.
Diagrams
Image | Part No | Mfg | Description | ![]() |
Pricing (USD) |
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![]() BTS113A |
![]() Infineon Technologies |
![]() Power Switch ICs - POE / LAN N-Channel 60V TEMPFET |
![]() Data Sheet |
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![]() BTS113A E3045A |
![]() Infineon Technologies |
![]() Power Switch ICs - POE / LAN N-Channel 60V TEMPFET |
![]() Data Sheet |
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![]() BTS113A E3064 |
![]() Infineon Technologies |
![]() Power Switch ICs - POE / LAN N-Channel 60V TEMPFET |
![]() Data Sheet |
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